Optimization of fmax and Higher Early voltage (VA), the two important factors in the design of a circuit, is investigated by changing W epi and NB values of low temperature LP-CVD epitaxial base. It is found that there are optimum conditions that can realize concurrent extremely high fmax value. The highest fmax value of 62.8GHz at a collector current of 1.7mA is achieved. Additionally, high BV CEO at 4.7V, high VA of 85.7V and low PBI value of 8.5 kΩ/sq are realized.
|頁（從 - 到）||131-132|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1995|
|事件||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
持續時間: 6 六月 1995 → 8 六月 1995