62.8GHz fmax LP-CVD epitaxially grown silicon base bipolar transistor with extremely high early voltage of 85.7V

C. Yoshino*, K. Inou, S. Matsuda, H. Nakajima, Y. Tsuboi, H. Naruse, H. Sugaya, Y. Katsumata, H. Iwai

*Corresponding author for this work

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Optimization of fmax and Higher Early voltage (VA), the two important factors in the design of a circuit, is investigated by changing W epi and NB values of low temperature LP-CVD epitaxial base. It is found that there are optimum conditions that can realize concurrent extremely high fmax value. The highest fmax value of 62.8GHz at a collector current of 1.7mA is achieved. Additionally, high BV CEO at 4.7V, high VA of 85.7V and low PBI value of 8.5 kΩ/sq are realized.

原文English
頁(從 - 到)131-132
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1995
事件Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
持續時間: 6 六月 19958 六月 1995

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