3D-TCAD simulation study of the contact all around T-FinFET structure for 10nm metal-oxide-semiconductor field-effect transistor

Chen Han Chou, Chung Chun Hsu, Wen Kuan Yeh, Steve S. Chung, Chao-Hsin Chien*

*Corresponding author for this work

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

We propose a new device structure, namely CAA T-FinFET, for 10nm MOSFETs with using contact all around (CAA) structure. According to 3D simulation study, the CAA T-FinFET possess many advantages over the conventional FinFET structure, such as short channel effect (SCE) suppression by self-aligned oxide (SA oxide), parasitic leakage path isolation with body-tied bulk, source/drain series resistance reducing and fin to fin pitch scaling by contact all around process. Base on heterogeneous bulk for strain application, CAA T-FinFET has better electrical performance and easy process control. All these advantages are achieved by depositing a self-aligned oxide after isotropic etching in S/D region. Contact all around can efficiently solve the series resistance degradation and pitch scaling by replacing diamond-shape S/D stressor with the full contact metal. CAA T-FinFET has high potential to be applied to the varied heterogeneous substrate and high mobility channel (Ge and III-V) MOSFETs by SA oxide.

原文English
主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面190-191
頁數2
ISBN(電子)9781509007264
DOIs
出版狀態Published - 六月 2016
事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
持續時間: 12 六月 201613 六月 2016

出版系列

名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
國家United States
城市Honolulu
期間12/06/1613/06/16

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