A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.
|主出版物標題||2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008|
|出版狀態||Published - 19 九月 2008|
|事件||2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States|
持續時間: 18 五月 2008 → 21 五月 2008
|名字||Proceedings - IEEE International Symposium on Circuits and Systems|
|Conference||2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008|
|期間||18/05/08 → 21/05/08|