2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

Ming-Dou Ker*, Tzu Ming Wang, Hung Tai Liao

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.

原文English
主出版物標題2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
頁面820-823
頁數4
DOIs
出版狀態Published - 19 九月 2008
事件2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
持續時間: 18 五月 200821 五月 2008

出版系列

名字Proceedings - IEEE International Symposium on Circuits and Systems
ISSN(列印)0271-4310

Conference

Conference2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
國家United States
城市Seattle, WA
期間18/05/0821/05/08

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