25 GHz HBT frequency dividers

R. B. Nubling*, N. H. Sheng, K. C. Wang, Mau-Chung Chang, W. J. Ho, G. J. Sullivan, C. W. Farley, P. M. Asbeck

*Corresponding author for this work

研究成果: Paper同行評審

15 引文 斯高帕斯(Scopus)

摘要

A report is presented on a regenerative frequency divider and a static frequency divider implemented with (AlGa)As/GaAs heterojunction bipolar transistors (HBTs). Both dividers have been operated at input frequencies higher than 25 GHz. Also described is a frequency divider implemented with AlInAs/GaInAs HBTs operating up to 17.1 GHz, at considerably reduced power. These frequency dividers are among the fastest ever reported for each of these circuit types and illustrate the feasibility of using direct frequency division in microwave systems up to Ku band.

原文English
頁面125-128
頁數4
出版狀態Published - 1 十二月 1989
事件11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 - San Diego, CA, USA
持續時間: 22 十月 198925 十月 1989

Conference

Conference11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989
城市San Diego, CA, USA
期間22/10/8925/10/89

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