A report is presented on a regenerative frequency divider and a static frequency divider implemented with (AlGa)As/GaAs heterojunction bipolar transistors (HBTs). Both dividers have been operated at input frequencies higher than 25 GHz. Also described is a frequency divider implemented with AlInAs/GaInAs HBTs operating up to 17.1 GHz, at considerably reduced power. These frequency dividers are among the fastest ever reported for each of these circuit types and illustrate the feasibility of using direct frequency division in microwave systems up to Ku band.
|出版狀態||Published - 1 十二月 1989|
|事件||11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 - San Diego, CA, USA|
持續時間: 22 十月 1989 → 25 十月 1989
|Conference||11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989|
|城市||San Diego, CA, USA|
|期間||22/10/89 → 25/10/89|