2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier

Jin Siang Syu, Chin-Chun Meng, Chun Yang, Guo Wei Huang

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

A 2-GHz single-voltage-supply 0.15-μm depletion-mode (D-mode) pseudomorphic high electron-mobility transistor (pHEMT) low-noise amplifier (LNA) is demonstrated with a proposed process-independent self-biasing scheme. The current-reused technique is also employed to achieve a common-source common-drain two-stage LNA under a dc current of 10.85 mA at a 3-V supply. As a result, the proposed LNA achieves 20-dB power gain and 1.35-dB noise figure (NF) at 2 GHz while the minimum NF=1.3 dB occurs at 2.4 GHz.

原文English
主出版物標題RWS 2018 - Proceedings
主出版物子標題2018 IEEE Radio and Wireless Symposium
發行者IEEE Computer Society
頁面84-87
頁數4
ISBN(電子)9781538607091
DOIs
出版狀態Published - 28 二月 2018
事件2018 IEEE Radio and Wireless Symposium, RWS 2018 - Anaheim, United States
持續時間: 14 一月 201817 一月 2018

出版系列

名字IEEE Radio and Wireless Symposium, RWS
2018-January
ISSN(列印)2164-2958
ISSN(電子)2164-2974

Conference

Conference2018 IEEE Radio and Wireless Symposium, RWS 2018
國家United States
城市Anaheim
期間14/01/1817/01/18

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    Syu, J. S., Meng, C-C., Yang, C., & Huang, G. W. (2018). 2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier. 於 RWS 2018 - Proceedings: 2018 IEEE Radio and Wireless Symposium (頁 84-87). (IEEE Radio and Wireless Symposium, RWS; 卷 2018-January). IEEE Computer Society. https://doi.org/10.1109/RWS.2018.8304952