2-bit Poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate

Yu Hsien Lin*, Chao-Hsin Chien, Tung Hung Chou, Tien-Sheng Chao, Chun Yen Chang, Tan Fu Lei

*Corresponding author for this work

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this paper, we, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO2, Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (>106s for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated.

原文English
主出版物標題IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
頁面927-930
頁數4
DOIs
出版狀態Published - 1 十二月 2005
事件IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
持續時間: 5 十二月 20057 十二月 2005

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(列印)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
國家United States
城市Washington, DC, MD
期間5/12/057/12/05

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