18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT

N. L. Wang*, N. H. Sheng, W. J. Ho, Mau-Chung Chang, G. J. Sullivan, J. A. Higgins, P. M. Asbeck

*Corresponding author for this work

研究成果: Conference article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).

原文English
頁(從 - 到)997-1000
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
3
DOIs
出版狀態Published - 1 一月 1990
事件1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA
持續時間: 8 五月 201010 五月 2010

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