Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).
|頁（從 - 到）||997-1000|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 1 一月 1990|
|事件||1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA|
持續時間: 8 五月 2010 → 10 五月 2010