1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment

Chih Tung Yeh, Wei Kai Wang, Yi Siang Shen, Ray-Hua Horng

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from %8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at VGS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10-6mA/mm, ION/IOFF ratio of approximately 108, and high breakdown voltage of 1480V were obtained.

原文English
文章編號05FK06
期刊Japanese Journal of Applied Physics
55
發行號5
DOIs
出版狀態Published - 1 五月 2016

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