1.3 μm light emission froni Al 2 O 3 /Si 1-x Ge x /Si MOS tunnel diodes

C. Y. Lin, H. Y. Lee, Albert Chin, Y. T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong

研究成果: Conference contribution同行評審

摘要

Light emission at ∼1.3 μm was measured at room temperature in Al 2 O 3 /Si 1-x Ge x MOS tunnel diodes on Si substrates. The merits of using Si 1-x Ge x in MOS light-emitting devices is that they can be embedded in a CMOS process, and have good efficiency (with photon energy < E g of Si)

原文English
主出版物標題CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
主出版物子標題Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁數1
ISBN(電子)0780377664
DOIs
出版狀態Published - 1 一月 2003
事件5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
持續時間: 15 十二月 200319 十二月 2003

出版系列

名字Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
1

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
國家Taiwan
城市Taipei
期間15/12/0319/12/03

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