Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.
|頁（從 - 到）||256-259|
|期刊||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|出版狀態||Published - 25 七月 2004|