This paper presents a high linearity MOSFET-only transconductor based on differential structures. The linearity is improved by mobility compensation techniques as the device size is scaled down in the nano-scale CMOS technology. Transconductance tuning could be achieved by transistors operating in the linear region. The simulated total harmonic distortion (THD) under 1-V power supply voltage shows 12 dB improvement of the proposed version, and -65 dB THD can be achieved for a 1 MHz 700 mVpp differential input Monte-Carlo simulation over the corner variation and transistor mismatch guarantees the shown performance. The static power consumption is 130 μW. Simulation results demonstrate the agreement with theoretical analyses.
|頁（從 - 到）||3792-3795|
|期刊||Proceedings - IEEE International Symposium on Circuits and Systems|
|出版狀態||Published - 27 九月 2007|
|事件||2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 - New Orleans, LA, United States|
持續時間: 27 五月 2007 → 30 五月 2007