0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer

Tatsuya Ohguro*, Keisaku Yamada, Naoharu Sugiyama, Seiji Imai, Kouji Usuda, Takashi Yoshitomi, Claudio Fiegna, Mizuki Ono, Masanobu Saito, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We demonstrated silicon MOSFET's with a counterdoped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFET's with ntype polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFET's with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage.

原文English
頁(從 - 到)717-721
頁數5
期刊IEEE Transactions on Electron Devices
45
發行號3
DOIs
出版狀態Published - 1998

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