1982 …2020

每年研究成果

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個人檔案

研究專長

半導體元件可靠性、快閃式記憶元件、高速元件與電路

經歷

1987/08 國立交通大學電子工程學系電子研究所教授

教育/學術資格

PhD, University of Illinois at Urbana-Champaign

外部位置

指紋 查看啟用 Ta-Hui Wang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。

  • 9 類似的個人檔案

網路 國家層面的近期外部共同作業。通過按一下圓點深入探索詳細資料。

專案

負電容電晶體中負電容效應之頻率響應及可靠性研究

Wang, T.

1/08/2031/07/21

研究計畫: Ministry of Science and Technology

負電容電晶體中負電容效應之頻率響應及可靠性研究

Wang, T.

1/08/1931/07/20

研究計畫: Ministry of Science and Technology

電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬

Wang, T.

1/08/1831/07/19

研究計畫: Ministry of Science and Technology

研究成果

Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device

Su, P. C., Jiang, C. M., Chen, Y. J., Wang, C. C., Li, K. S., Lin, C. C. & Wang, T., 一月 2020, 於 : IEEE Transactions on Electron Devices. 67, 1, p. 113-117 5 p., 8935500.

研究成果: Article

  • Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory

    Lu, C. C., Cheng, C. C., Chiu, H. P., Lin, W. L., Chen, T. W., Ku, S. H., Tsai, W. J., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 16 一月 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 2.2.1-2.2.4 8614548. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

    研究成果: Conference contribution

  • 1 引文 斯高帕斯(Scopus)

    Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on Vt Retention Loss in a Multilevel Charge Trap Flash Memory

    Liu, Y. H., Zhan, T. C., Wang, T., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 十二月 2019, 於 : IEEE Transactions on Electron Devices. 66, 12, p. 5155-5161 7 p., 8895844.

    研究成果: Article

  • Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory

    Lin, T. W., Ku, S. H., Cheng, C. H., Lee, C. W., Ijen-Huang, Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 25 五月 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.61-PMY.65 (IEEE International Reliability Physics Symposium Proceedings; 卷 2018-March).

    研究成果: Conference contribution

  • 1 引文 斯高帕斯(Scopus)

    Correlation between SET-state current level and read-disturb failure time in a resistive switching memory

    Su, P. C., Jiang, C. M., Wang, C. W. & Wang, T-H., 25 五月 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.11-PMY.15 (IEEE International Reliability Physics Symposium Proceedings; 卷 2018-March).

    研究成果: Conference contribution

  • 2 引文 斯高帕斯(Scopus)