每年研究成果
每年研究成果
個人檔案
研究專長
Semiconductor Devices and Physics, CMOS Technology
教育/學術資格
PhD, The University of Tokyo
指紋
查看啟用 Hiroshi Iwai 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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網路
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研究成果
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3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology
Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Satoh, K., Matsudai, T., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S., Omura, I., Ohashi, H. & Hiramoto, T., 12 十二月 2020, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 5.3.1-5.3.4 9371909. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December).研究成果: Conference contribution › 同行評審
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Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs
Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. 及其他2, , 五月 2020, 於: IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.研究成果: Article › 同行評審
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Erratum: Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization (IEEE Transactions on Electron Devices (2020) 67:1 (377–382) DOI: 10.1109/TED.2019.2954585)
Verhulst, A. S., Saeidi, A., Stolichnov, I., Alian, A., Iwai, H., Collaert, N. & Ionescu, A. M., 七月 2020, 於: IEEE Transactions on Electron Devices. 67, 7, p. 3017 1 p., 9121803.研究成果: Comment/debate
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Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization
Verhulst, A. S., Saeidi, A., Stolichnov, I., Alian, A., Iwai, H., Collaert, N. & Ionescu, A. M., 一月 2020, 於: IEEE Transactions on Electron Devices. 67, 1, p. 377-382 6 p., 8935490.研究成果: Article › 同行評審
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Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs
Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I. & Hiramoto, T., 1 四月 2020, 於: Japanese Journal of Applied Physics. 59, SG, SGGD18.研究成果: Article › 同行評審