周承翰

約聘助理研究員

國立交通大學

https://orcid.org/0000-0003-2919-2539

每年研究成果

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5 Article
2 Conference contribution
1 Comment/debate

5結果

篩選

2018
Incorporating yttrium into a GeO interfacial layer with HfO₂-based gate stack on Ge
Chou, C. H., Lu, Y. H., Tsai, Y. H., Shih, A. S., Yeh, W. K. & Chien, C. H., 19 一月 2018, 於: ECS Journal of Solid State Science and Technology. 7, 2, p. N15-N19 5 p.
研究成果: Article › 同行評審
1 引文斯高帕斯（Scopus）
2017
Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping
Chou, C. H., Tsai, Y. H., Hsu, C. C., Jau, Y. H., Lin, Y. H., Yeh, W. K. & Chien, C. H., 1 五月 2017, 於: IEEE Transactions on Electron Devices. 64, 5, p. 2314-2320 7 p., 7885604.
研究成果: Article › 同行評審
6 引文斯高帕斯（Scopus）
2016
Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
Hsu, C. C., Chi, W. C., Tsai, Y. H., Chou, C. H., Chen, C. W., Chien, H. P., Chuang, S. S., Luo, G. L., Lee, Y. J. & Chien, C. H., 1 七月 2016, 於: IEEE Transactions on Electron Devices. 63, 7, p. 2714-2721 8 p., 7484321.
研究成果: Article › 同行評審
4 引文斯高帕斯（Scopus）
Low-leakage tetragonal ZrO ₂ (EOT < 1 nm) with in situ plasma interfacial passivation on germanium
Chou, C. H., Chang, H. H., Hsu, C. C., Yeh, W. K. & Chien, C. H., 1 二月 2016, 於: IEEE Electron Device Letters. 37, 2, p. 138-141 4 p., 7358074.
研究成果: Article › 同行評審
11 引文斯高帕斯（Scopus）
2015
Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal
Hsu, C. C., Chou, C. H., Wang, S. Y., Chi, W. C., Chien, C. H. & Luo, G. L., 14 九月 2015, 於: Applied Physics Letters. 107, 11, 113503.
研究成果: Article › 同行評審
4 引文斯高帕斯（Scopus）

搜尋結果

Incorporating yttrium into a GeO interfacial layer with HfO2-based gate stack on Ge

Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Low-leakage tetragonal ZrO 2 (EOT < 1 nm) with in situ plasma interfacial passivation on germanium

Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal

Incorporating yttrium into a GeO interfacial layer with HfO₂-based gate stack on Ge

Low-leakage tetragonal ZrO ₂ (EOT < 1 nm) with in situ plasma interfacial passivation on germanium

Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal