周承翰

約聘助理研究員

https://orcid.org/0000-0003-2919-2539

每年研究成果

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個人檔案

教育/學術資格

PhD, National Yang Ming Chiao Tung University

指紋

查看啟用 Chen-Han Chou 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。

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5 Article
1 Conference contribution
1 Comment/debate

Incorporating yttrium into a GeO interfacial layer with HfO₂-based gate stack on Ge
Chou, C. H., Lu, Y. H., Tsai, Y. H., Shih, A. S., Yeh, W. K. & Chien, C. H., 19 一月 2018, 於: ECS Journal of Solid State Science and Technology. 7, 2, p. N15-N19 5 p.
研究成果: Article › 同行評審
1 引文斯高帕斯（Scopus）
Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping
Chou, C. H., Tsai, Y. H., Hsu, C. C., Jau, Y. H., Lin, Y. H., Yeh, W. K. & Chien, C. H., 1 五月 2017, 於: IEEE Transactions on Electron Devices. 64, 5, p. 2314-2320 7 p., 7885604.
研究成果: Article › 同行評審
6 引文斯高帕斯（Scopus）
Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
Hsu, C. C., Chi, W. C., Tsai, Y. H., Chou, C. H., Chen, C. W., Chien, H. P., Chuang, S. S., Luo, G. L., Lee, Y. J. & Chien, C. H., 1 七月 2016, 於: IEEE Transactions on Electron Devices. 63, 7, p. 2714-2721 8 p., 7484321.
研究成果: Article › 同行評審
4 引文斯高帕斯（Scopus）
Low-leakage tetragonal ZrO ₂ (EOT < 1 nm) with in situ plasma interfacial passivation on germanium
Chou, C. H., Chang, H. H., Hsu, C. C., Yeh, W. K. & Chien, C. H., 1 二月 2016, 於: IEEE Electron Device Letters. 37, 2, p. 138-141 4 p., 7358074.
研究成果: Article › 同行評審
11 引文斯高帕斯（Scopus）
3D-TCAD simulation study of the novel T-FinFET structure for sub-14nm metal-oxide-semiconductor field-effect transistor
Chou, C. H., Hsu, C. C., Chung, S. S. & Chien, C. H., 24 九月 2015, 2015 Silicon Nanoelectronics Workshop, SNW 2015. Institute of Electrical and Electronics Engineers Inc., 7275311. (2015 Silicon Nanoelectronics Workshop, SNW 2015).
研究成果: Conference contribution › 同行評審
2 引文斯高帕斯（Scopus）

教育/學術資格

Incorporating yttrium into a GeO interfacial layer with HfO2-based gate stack on Ge

Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Low-leakage tetragonal ZrO 2 (EOT < 1 nm) with in situ plasma interfacial passivation on germanium

3D-TCAD simulation study of the novel T-FinFET structure for sub-14nm metal-oxide-semiconductor field-effect transistor

Incorporating yttrium into a GeO interfacial layer with HfO₂-based gate stack on Ge

Low-leakage tetragonal ZrO ₂ (EOT < 1 nm) with in situ plasma interfacial passivation on germanium