ZrN-Based Flexible Resistive Switching Memory

Dayanand Kumar, Umesh Chand, Lew Wen Siang, Tseung Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

Original languageEnglish
Article number9039564
Pages (from-to)705-708
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number5
DOIs
StatePublished - May 2020

Keywords

  • conductive filament
  • nitrogen ions
  • resistive switching
  • RRAM

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