Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Huang-Chung Cheng*, Po Yu Yang, Jyh Liang Wang, Sanjay Agarwal, Wei Chih Tsai, Shui Jinn Wang, I. Che Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.

Original languageEnglish
Article number5713228
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number4
DOIs
StatePublished - 1 Apr 2011

Keywords

  • Hydrothermal method
  • lateral grain growth
  • thin-film transistor (TFT)
  • zinc oxide (ZnO)

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    Cheng, H-C., Yang, P. Y., Wang, J. L., Agarwal, S., Tsai, W. C., Wang, S. J., & Lee, I. C. (2011). Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method. IEEE Electron Device Letters, 32(4), 497-499. [5713228]. https://doi.org/10.1109/LED.2010.2103921