Zinc gallium oxide—a review from synthesis to applications

Mu I. Chen, Anoop Kumar Singh, Jung Lung Chiang, Ray Hua Horng*, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

Abstract

Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap and high chemical and thermal stability; hence, paving the way for it to have potential in various applications. This review focuses on its physical, optical, mechanical and electrical properties, contributing to the better understanding of this material. The recent trends for growth techniques and processing in the research and development of ZnGa2O4 from bulk crystal growth to thin films are discussed in detail for device performance. This material has excellent properties and is investigated widely in deep-ultraviolet photodetectors, gas sensors and phosphors. In this article, effects of substrate temperature, annealing temperature, oxygen partial pressure and zinc/gallium ratio are discussed for device processing and fabrication. In addition, research progress and future outlooks are also identified.

Original languageEnglish
Article number2208
Pages (from-to)1-37
Number of pages37
JournalNanomaterials
Volume10
Issue number11
DOIs
StatePublished - Nov 2020

Keywords

  • Gas sensor
  • Phosphor
  • Photodetector
  • Spinel structure
  • Wide-bandgap
  • ZnGa2O4

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