XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics

Jieqiong Zhang, Hei Wong, Hiroshi Iwai, Kuniyuki Kakushima

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


The effects of thermal annealing on the interface reactions and bonding structures of CeO2/La2O3 stacked dielectrics are investigated by x-ray photoelectron spectroscopy (XPS) measurements. We found that the thermal treatment can lead to significant interface oxidation and silicate formation both in the bulk and at the interface. Sample with 600 °C annealing exhibits some better interface properties than that at 500 °C. Detailed XPS studies further reveal that that a small amount of Ce3+ states were re-oxidized into Ce4+ states at the CeO2/La2O3 interface as the annealing temperature increased. This effect became more obvious at the location closer to the bulk La2O3. The phenomena and mechanisms revealed in this work provide some useful guidelines for determining better processing conditions or processing sequence for subnanometer EOT gate dielectric fabrication.

Original languageEnglish
Title of host publicationTENCON 2015 - 2015 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479986415
StatePublished - 5 Jan 2016
Event35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao
Duration: 1 Nov 20154 Nov 2015

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450


Conference35th IEEE Region 10 Conference, TENCON 2015


  • high-k dielectric materials
  • interface reaction
  • thermal annealing
  • x-ray photoelectron spectroscopy (XPS)

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