The interfacial structure of room-temperature MBE-grown Cu thin film on c-plane sapphire has been studied by measuring the substrate crystal truncation rod (CTR) using synchrotron-radiation. One substrate was annealed in air at 1500 °C for 3 hours followed by an anneal in UHV at 1200 °C for 30 minutes prior to Cu deposition. CTR from a clean sapphire substrate without Cu coverage was measured as a reference. The annealed substrate showed higher diffracted intensity along the CTR due to changes in surface structure. The terminating sequence of the substrate surface layers have been obtained from intensity profile analysis.
|Number of pages||6|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA|
Duration: 8 Apr 1996 → 12 Apr 1996
|Conference||Proceedings of the 1996 MRS Spring Meeting|
|City||San Francisco, CA, USA|
|Period||8/04/96 → 12/04/96|