X-ray truncation rods analysis of Cu thin films on C-plane sapphire

K. S. Chung*, Hawoong Hong, R. D. Aburano, J. M. Roesler, T. C. Chiang, Haydn Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The interfacial structure of room-temperature MBE-grown Cu thin film on c-plane sapphire has been studied by measuring the substrate crystal truncation rod (CTR) using synchrotron-radiation. One substrate was annealed in air at 1500 °C for 3 hours followed by an anneal in UHV at 1200 °C for 30 minutes prior to Cu deposition. CTR from a clean sapphire substrate without Cu coverage was measured as a reference. The annealed substrate showed higher diffracted intensity along the CTR due to changes in surface structure. The terminating sequence of the substrate surface layers have been obtained from intensity profile analysis.

Original languageEnglish
Pages21-26
Number of pages6
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 8 Apr 199612 Apr 1996

Conference

ConferenceProceedings of the 1996 MRS Spring Meeting
CitySan Francisco, CA, USA
Period8/04/9612/04/96

Fingerprint Dive into the research topics of 'X-ray truncation rods analysis of Cu thin films on C-plane sapphire'. Together they form a unique fingerprint.

Cite this