X-ray scattering study of crystallization behavior in homoepitaxial growth of SrTiO 3 films

Hsin Yi Lee*, Wei Der Chang, C. H. Hsu, K. S. Liang, J. Y. Lee, Jenh-Yih Juang, Kaung-Hsiung Wu, T. M. Uen, Y. S. Gou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

X-ray reflectivity and grazing incidence crystal truncation rod (CTR) measurements were employed to characterize the microstructure and crystallization behavior of homoepitaxial SrTiO 3 (STO) films deposited on polished SrTiO 3 (001) substrates by pulse laser deposition technique. X-ray scattering results indicate that room temperature grown STO film has a density approximately 11.1% lower than that of bulk STO and shows poor epitaxial relation with the substrate. Subsequent annealing at 760 °C for 20 s appeared to transform the film into two-layer structure, with the density of the layer right above the substrate approaching to its bulk value, while the density of the top 15.5 Å thick layer reducing to near 45% of bulk STO. The annealing process also leads to an increase of lateral lattice constant together with the growth of domain size. The appearance of interference fringes of the CTR after annealing, which is also observed at the film grown at 760 °C, clearly demonstrates the development of epitaxy upon short time annealing.

Original languageEnglish
Pages (from-to)163-168
Number of pages6
JournalThin Solid Films
Volume418
Issue number2
DOIs
StatePublished - 15 Oct 2002

Keywords

  • Growth Mechanism
  • Surfce structures
  • X-ray diffraction
  • X-Ray scattering

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