X-ray scattering study of Ag/Si(111) buried interface structures

Hawoong Hong; R. D. Aburano; D. S. Lin; H. D. Chen; T. C. Chiang; P. Zschack; E. D. Specht

doi:10.1103/PhysRevLett.68.507

X-ray scattering study of Ag/Si(111) buried interface structures

Hawoong Hong^*, R. D. Aburano, D. S. Lin, H. D. Chen, T. C. Chiang, P. Zschack, E. D. Specht

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Various interface structures formed between Si(111) and a thick Ag overlayer are investigated by grazing-incidence x-ray diffraction. The (7×7) reconstruction of Si(111) is preserved under a room-temperature deposited Ag film. Upon annealing to 250°C the interface becomes (1×1). This is contrasted by the (3 × 3) R30°structure formed by annealing a thin Ag film on Si(111). By depositing a thick Ag film on this (3 × 3) R30°Ag/Si(111) surface at room temperature, the (3 × 3) R30°reconstruction is suppressed.

Original language	English
Pages (from-to)	507-510
Number of pages	4
Journal	Physical Review Letters
Volume	68
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.68.507
State	Published - 1 Jan 1992

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abstract = "Various interface structures formed between Si(111) and a thick Ag overlayer are investigated by grazing-incidence x-ray diffraction. The (7×7) reconstruction of Si(111) is preserved under a room-temperature deposited Ag film. Upon annealing to 250°C the interface becomes (1×1). This is contrasted by the (3 × 3) R30°structure formed by annealing a thin Ag film on Si(111). By depositing a thick Ag film on this (3 × 3) R30°Ag/Si(111) surface at room temperature, the (3 × 3) R30°reconstruction is suppressed.",

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AU - Hong, Hawoong

AU - Aburano, R. D.

AU - Lin, D. S.

AU - Chen, H. D.

AU - Chiang, T. C.

AU - Zschack, P.

AU - Specht, E. D.

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