@inproceedings{7fffc2aa0f994050ac412178f2f07a19,
title = "Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process",
abstract = "In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.",
author = "Wang, {Xin Peng} and Li, {Ming Fu} and Yu, {H. Y.} and C. Ren and Loh, {W. Y.} and Zhu, {C. X.} and Albert Chin and Trigg, {A. D.} and Yeo, {Yee Chia} and S. Biesemans and Lo, {G. Q.} and Kwong, {D. L.}",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/ICSICT.2006.306268",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "424--426",
booktitle = "ICSICT-2006",
address = "United States",
note = "null ; Conference date: 23-10-2006 Through 26-10-2006",
}