Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

Xin Peng Wang*, Ming Fu Li, H. Y. Yu, C. Ren, W. Y. Loh, C. X. Zhu, Albert Chin, A. D. Trigg, Yee Chia Yeo, S. Biesemans, G. Q. Lo, D. L. Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages424-426
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 1 Jan 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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