Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

Xin Peng Wang; Ming Fu Li; H. Y. Yu; C. Ren; W. Y. Loh; C. X. Zhu; Albert Chin; A. D. Trigg; Yee Chia Yeo; S. Biesemans; G. Q. Lo; D. L. Kwong

doi:10.1109/ICSICT.2006.306268

Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

Xin Peng Wang^*, Ming Fu Li, H. Y. Yu, C. Ren, W. Y. Loh, C. X. Zhu, Albert Chin, A. D. Trigg, Yee Chia Yeo, S. Biesemans, G. Q. Lo, D. L. Kwong

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO₂ gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	424-426
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306268
State	Published - 1 Jan 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 23 Oct 2006 → 26 Oct 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country	China
City	Shanghai
Period	23/10/06 → 26/10/06

Access to Document

10.1109/ICSICT.2006.306268

Link to publication in Scopus

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Wang, X. P., Li, M. F., Yu, H. Y., Ren, C., Loh, W. Y., Zhu, C. X., Chin, A., Trigg, A. D., Yeo, Y. C., Biesemans, S., Lo, G. Q., & Kwong, D. L. (2006). Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 424-426). [4098125] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306268

Wang, Xin Peng ; Li, Ming Fu ; Yu, H. Y. ; Ren, C. ; Loh, W. Y. ; Zhu, C. X. ; Chin, Albert ; Trigg, A. D. ; Yeo, Yee Chia ; Biesemans, S. ; Lo, G. Q. ; Kwong, D. L. / Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 424-426 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{7fffc2aa0f994050ac412178f2f07a19,

title = "Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process",

abstract = "In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.",

author = "Wang, {Xin Peng} and Li, {Ming Fu} and Yu, {H. Y.} and C. Ren and Loh, {W. Y.} and Zhu, {C. X.} and Albert Chin and Trigg, {A. D.} and Yeo, {Yee Chia} and S. Biesemans and Lo, {G. Q.} and Kwong, {D. L.}",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/ICSICT.2006.306268",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "424--426",

booktitle = "ICSICT-2006",

address = "United States",

note = "null ; Conference date: 23-10-2006 Through 26-10-2006",

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Wang, XP, Li, MF, Yu, HY, Ren, C, Loh, WY, Zhu, CX, Chin, A, Trigg, AD, Yeo, YC, Biesemans, S, Lo, GQ & Kwong, DL 2006, Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098125, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 424-426, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 23/10/06. https://doi.org/10.1109/ICSICT.2006.306268

Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process. / Wang, Xin Peng; Li, Ming Fu; Yu, H. Y.; Ren, C.; Loh, W. Y.; Zhu, C. X.; Chin, Albert; Trigg, A. D.; Yeo, Yee Chia; Biesemans, S.; Lo, G. Q.; Kwong, D. L.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 424-426 4098125 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

AU - Wang, Xin Peng

AU - Li, Ming Fu

AU - Yu, H. Y.

AU - Ren, C.

AU - Loh, W. Y.

AU - Zhu, C. X.

AU - Chin, Albert

AU - Trigg, A. D.

AU - Yeo, Yee Chia

AU - Biesemans, S.

AU - Lo, G. Q.

AU - Kwong, D. L.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.

AB - In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. We also report the effective work function of TaN can be tuned to p-type with the incorporation of Al Based on our findings, we propose a feasible integration process for dual metal gate CMOS technology.

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SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

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EP - 426

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PB - IEEE Computer Society

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Wang XP, Li MF, Yu HY, Ren C, Loh WY, Zhu CX et al. Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 424-426. 4098125. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306268