Work function investigation in advanced metal gate-HfO2-SiO2 systems with bevel structures

Atsushi Kuriyama, Olivier Faynot, Laurent Brévard, Amélie Tozzo, Laurence Clerc, Simon Deleonibus, Jérôme Mitard, Vincent Vidal, Sorin Cristoloveanu, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

This paper presents for the first time the extraction of chemical vapor deposition (CVD)-TiN and poly-Si work functions on atomic layer deposition (ALD)-HfO2 and high temperature SiO2 (HTO) for a wide range of EOT values. The measurements were performed on bevel oxide structures. Our results reveal that the work functions of both TiN and poly-Si gates highly depend on the underlying dielectrics especially in the case of TiN on HTO films likewise lower leakage currents depending on dielectric stacks. It is notable that when TiN is formed on the HTO film, its work function has two distinct values depending on the HTO thickness; this indicates that Ti-Si bonds strongly affect the work function variation. Both TiN on HTO and poly-Si on HfO2 show the work function shifts to about 4.3 eV, suggesting a pinning level on both structures.

Original languageEnglish
Title of host publicationESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages109-112
Number of pages4
ISBN (Print)1424403014, 9781424403011
DOIs
StatePublished - 2006
EventESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux, Switzerland
Duration: 19 Sep 200621 Sep 2006

Publication series

NameESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Volume2006-January

Conference

ConferenceESSDERC 2006 - 36th European Solid-State Device Research Conference
CountrySwitzerland
CityMontreux
Period19/09/0621/09/06

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