Width Dependence of Substrate and Gate Currents in MOSFET's

Tong Chern Ong, Ping Keung Ko, Chen-Ming Hu, Simon Tam

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Width dependence of hot-electron currents in MOSFET’s fabricated with LOCOS, non-LOCOS, and a modified LOCOS processes are studied. The experimental results show that the substrate and gate currents are apparently enhanced in narrow width devices. The enhancement, however, is due to different voltage drops across the source-drain series resistance. The voltage drops are usually larger in wider devices. After correcting for the resistance effect, the substrate and gate currents scale with the device width. With this typical LOCOS process, the bird’s beak and in-diffusion of field implant dopants do not cause excess hot-electron activities along the channel/field edges as has been suspected. Some other LOCOS process could, of course, produce a different result. Studies using wide test devices must consider the series resistance effect. With this precaution taken, models derived from wide-channel data will be applicable to narrow-channel devices, at least for some processes.

Original languageEnglish
Pages (from-to)1737-1740
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume32
Issue number9
DOIs
StatePublished - 1 Jan 1985

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