Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

X. P. Wang, M. F. Li, H. Y. Yu, J. J. Yang, J. D. Chen, C. X. Zhu, A. Y. Du, W. Y. Loh, S. Biesemans, Albert Chin, G. Q. Lo, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

For the first time, we demonstrate experimentally that using HfLaO high-k gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000°C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayer metal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process.

Original languageEnglish
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages383-386
Number of pages4
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - 1 Jan 2011

Keywords

  • CMOS
  • Fermi level pinning
  • HfLaO
  • High-K dielectric
  • Interdiffusion
  • Metal gate
  • Work function

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    Wang, X. P., Li, M. F., Yu, H. Y., Yang, J. J., Chen, J. D., Zhu, C. X., Du, A. Y., Loh, W. Y., Biesemans, S., Chin, A., Lo, G. Q., & Kwong, D. L. (2011). Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric. In Selected Semiconductor Research (pp. 383-386). Imperial College Press. https://doi.org/10.1142/9781848164079_0006