Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load

H. J. Wei*, Chin-Chun Meng, Y. W. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A regenerative frequency divider with a differential transimpedance amplifier (TIA) active load using 0.35m SiGe HBT technology is demonstrated. The differential TIA is beneficial for higher frequency and lower sensitivity operation, and the inductive peaking enhances the bandwidth of the output buffer. From the experimental results, the operating frequency ranges from 5 to 27GHz (fmax/fmin=5.2) for a supply voltage of 5V and core power consumption of 49.5mW. The chip size is 0.86×0.822mm.

Original languageEnglish
Pages (from-to)1021-1022
Number of pages2
JournalElectronics Letters
Volume43
Issue number19
DOIs
StatePublished - 19 Sep 2007

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