Wide-IF-band CMOS mixer design

Pei Yuan Chiang*, Chao Wei Su, Sz Yun Luo, Shu-I Hu, Christina F. Jou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

A wide-IF-band transistor mixer has been designed using a 0.13-μm RF-CMOS process where its RF frequency is 8.717.4 GHz, local oscillator (LO) fixed at 17.4 GHz, and IF up to 8.7 GHz. Proper layout arrangement for the Marchand balun has been discussed and then implemented; the output amplitude and phase imbalance are less than 0.5 dB and 1° measured in the RF bandwidth. Related theories for the core mixing circuit are explored extensively and verified through simulation; broad bandwidth of the resistive double-balanced mixer is then confirmed in the IF aspect. The designed mixer has more than 10-dB conversion gain, matched RF, IF, and LO ports, and good port isolation over the intended wide bandwidth. The input-referred P1 dB is -17.5 dBm at 9 GHz and -16 dBm at 13 GHz. The third-order input intercept point is -6 dBm at 9 GHz and -5 dBm at 13 GHz. The noise figure is 7 dB at 9 GHz and 12.6 dB at 13 GHz. The power consumption is 40 mW for this 1.3-mm 2 mixer chip.

Original languageEnglish
Article number5427063
Pages (from-to)831-840
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume58
Issue number4
DOIs
StatePublished - 1 Apr 2010

Keywords

  • Conversion matrix
  • Marchand balun
  • Wideband mixer

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