Wide bandwidth AlAs/AlGaAs tandem Bragg reflectors grown by organometallic vapor phase epitaxy

Wei-I Lee*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Wide bandwidth AlAs/Al0.6Ga0.4As tandem Bragg reflectors were grown by organometallic vapor phase epitaxy. Quarter-wave reflector stacks designed for different wavelengths were placed in cascade in epitaxially grown structures to expand the high reflectance bands. Intermediate low-index layers were put in between every two stacks to suppress the transmission peaks in the centers of the combined high reflectance bands. While a single-stack structure showed a full width half-maximum bandwidth of 500 Å, the two-stack and the three-stack structures effectively doubled and tripled this bandwidth to approximately 1000 and 1500 Å, respectively.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1 Dec 1995

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