Wide-band matched LNA design using transistor's intrinsic gate-drain capacitor

Shu-I Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

This paper presents the development of a wide-band amplifier with matched input impedance and low noise temperature over 10-20 GHz. Here, the novel wide-band feedback mechanism provided by the transistor's intrinsic gate-drain capacitor will be analyzed in detail with both the derived input reflection coefficient and noise temperature of the resulting circuit confirmed by their simulated counterparts. It is thus clear why by fine tuning its output RC loading impedance and source inductance, a transistor's input reflection coefficient and noise temperature can be greatly improved over broad bandwidth. To demonstrate the feasibility of this novel approach, a wide-band low-noise amplifier (LNA) is designed and characterized. A bandwidth broadening mechanism using double feedback is also proposed for the future design of matched ultra-wide-band LNA.

Original languageEnglish
Pages (from-to)1277-1286
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume54
Issue number3
DOIs
StatePublished - 1 Mar 2006

Keywords

  • Input matching
  • Low-noise amplifier (LNA)
  • Noise parameters
  • Noise temperature
  • Wide-band

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