A whole-chip ESD protection scheme with the ESD-connection diodes and a substrate-triggering field-oxide device (STFOD) are proposed to protect mixed-mode CMOS IC's against ESD damage. The STFOD is triggered on by the substrate-triggering technique to make an area-efficient VDD-to-VSS ESD clamp circuit. The ESD-connection diodes provide the current discharging paths among the multiple separated power lines to avoid the ESD damage located at the digital-analog interface. This whole-chip ESD protection scheme has been practically verified in an 8-bits DAC chip in a 0.6-μm CMOS process with a pin-to-pin ESD robustness of above 4 KV.
|Number of pages||4|
|Journal||Proceedings of the Custom Integrated Circuits Conference|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA|
Duration: 5 May 1997 → 8 May 1997