White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

J. K. Sheu*, C. J. Pan, G. C. Chi, Cheng-Huang Kuo, L. W. Wu, C. H. Chen, S. J. Chang, Y. K. Su

*Corresponding author for this work

Research output: Contribution to journalArticle

90 Scopus citations

Abstract

Si and Zn codoped InxGa1-xN-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm∼560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current.

Original languageEnglish
Pages (from-to)450-452
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number4
DOIs
StatePublished - 1 Apr 2002

Keywords

  • Donor-acceptor pair transition
  • InGaN
  • LED
  • MQW

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    Sheu, J. K., Pan, C. J., Chi, G. C., Kuo, C-H., Wu, L. W., Chen, C. H., Chang, S. J., & Su, Y. K. (2002). White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer. IEEE Photonics Technology Letters, 14(4), 450-452. https://doi.org/10.1109/68.992574