Wet mesa etching process in InGaN-based light emitting diodes

Chung Chieh Yang*, Chia Feng Lin, Ren Hao Jiang, Hsun Chih Liu, Chun Min Lin, Chung Ying Chang, Dong Sing Wuu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

A photoelectrochemical wet mesa etching (WME) process was used to fabricate InGaN-based light emitting diodes (LEDs) as a substitute for the conventional plasma mesa dry etching process. The p-type GaN:Mg layer, InGaN active layer, and n-type GaN:Si layer were etched through a sequential photoelectrochemical oxidation and oxide-removing process to define the mesa region. The higher lateral wet-etching rate (∼3.4 μmh) of the InGaN active layer was observed to form a wider undercut structure which has 42.7% light output power enhancement compared to a conventional LED fabricated with the plasma dry etching process. The reverse current of a WME-LED was suppressed by avoiding plasma damage during the dry mesa etching process.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number7
DOIs
StatePublished - 26 May 2008

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    Yang, C. C., Lin, C. F., Jiang, R. H., Liu, H. C., Lin, C. M., Chang, C. Y., Wuu, D. S., Kuo, H-C., & Wang, S. C. (2008). Wet mesa etching process in InGaN-based light emitting diodes. Electrochemical and Solid-State Letters, 11(7). https://doi.org/10.1149/1.2908196