Well-posedness of the hydrodynamic model for semiconductors

Li-Ming Yeh*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This paper concerns the well-posedness of the hydrodynamic model for semiconductor devices, a quasilinear elliptic-parbolic-hyperbolic system. Boundary conditions for elliptic and parabolic equations are Dirichlet conditions while boundary conditions for the hyperbolic equations are assumed to be well-posed in L2 sense. Maximally strictly dissipative boundary conditions for the hyperbolic equations satisfy the assumption of well-posedness in L2 sense. The well-posedness of the model under the boundary conditions is demonstrated.

Original languageEnglish
Pages (from-to)1489-1507
Number of pages19
JournalMathematical Methods in the Applied Sciences
Volume19
Issue number18
DOIs
StatePublished - 1 Jan 1996

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