Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperature

D. Biswas; A. K. Meikap; S. K. Chattopadhyay; S. K. Chatterjee; Juhn-Jong Lin

doi:10.1016/j.physleta.2004.06.016

Weak localization and electron-electron interaction in disordered V₈₀Al_20-xFe_x alloys at low temperature

D. Biswas, A. K. Meikap^*, S. K. Chattopadhyay, S. K. Chatterjee, Juhn-Jong Lin

^*Corresponding author for this work

Institute of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V ₈₀Al _20-xFe _x alloys in the temperature range 1.5≤T≤300 K and analyze them in the light of weak localization and electron-electron interaction. The low temperature zero field resistivity obeys a T ^1/2 law, which is explained by electron-electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin-orbit interaction. The electron-phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interaction.

Original language	English
Pages (from-to)	380-386
Number of pages	7
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	328
Issue number	4-5
DOIs	https://doi.org/10.1016/j.physleta.2004.06.016
State	Published - 2 Aug 2004

Keywords

Vanadium alloy
Magneto-resistivity
Low Temperature
Electron-phonon scattering

Access to Document

10.1016/j.physleta.2004.06.016

Fingerprint Dive into the research topics of 'Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperature'. Together they form a unique fingerprint.

Cite this

@article{b781b2315b6e45558f3f4f9ebeaba7ee,

title = "Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperature",

abstract = "In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V 80Al 20-xFe x alloys in the temperature range 1.5≤T≤300 K and analyze them in the light of weak localization and electron-electron interaction. The low temperature zero field resistivity obeys a T 1/2 law, which is explained by electron-electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin-orbit interaction. The electron-phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interaction.",

keywords = "Vanadium alloy, Magneto-resistivity, Low Temperature, Electron-phonon scattering",

author = "D. Biswas and Meikap, {A. K.} and Chattopadhyay, {S. K.} and Chatterjee, {S. K.} and Juhn-Jong Lin",

year = "2004",

month = aug,

day = "2",

doi = "10.1016/j.physleta.2004.06.016",

language = "English",

volume = "328",

pages = "380--386",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier",

number = "4-5",

}

Weak localization and electron-electron interaction in disordered V₈₀Al_20-xFe_x alloys at low temperature. / Biswas, D.; Meikap, A. K.; Chattopadhyay, S. K.; Chatterjee, S. K.; Lin, Juhn-Jong.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 328, No. 4-5, 02.08.2004, p. 380-386.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperature

AU - Biswas, D.

AU - Meikap, A. K.

AU - Chattopadhyay, S. K.

AU - Chatterjee, S. K.

AU - Lin, Juhn-Jong

PY - 2004/8/2

Y1 - 2004/8/2

N2 - In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V 80Al 20-xFe x alloys in the temperature range 1.5≤T≤300 K and analyze them in the light of weak localization and electron-electron interaction. The low temperature zero field resistivity obeys a T 1/2 law, which is explained by electron-electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin-orbit interaction. The electron-phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interaction.

AB - In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V 80Al 20-xFe x alloys in the temperature range 1.5≤T≤300 K and analyze them in the light of weak localization and electron-electron interaction. The low temperature zero field resistivity obeys a T 1/2 law, which is explained by electron-electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin-orbit interaction. The electron-phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interaction.

KW - Vanadium alloy

KW - Magneto-resistivity

KW - Low Temperature

KW - Electron-phonon scattering

UR - http://www.scopus.com/inward/record.url?scp=3242723304&partnerID=8YFLogxK

U2 - 10.1016/j.physleta.2004.06.016

DO - 10.1016/j.physleta.2004.06.016

M3 - Article

AN - SCOPUS:3242723304

VL - 328

SP - 380

EP - 386

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

SN - 0375-9601

IS - 4-5

ER -

Weak localization and electron-electron interaction in disordered V₈₀Al_20-xFe_x alloys at low temperature

Abstract

Keywords

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Weak localization and electron-electron interaction in disordered V<sub>80</sub>Al<sub>20-x</sub>Fe<sub>x</sub> alloys at low temperature'. Together they form a unique fingerprint.

Cite this