Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperature

D. Biswas, A. K. Meikap*, S. K. Chattopadhyay, S. K. Chatterjee, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V 80Al 20-xFe x alloys in the temperature range 1.5≤T≤300 K and analyze them in the light of weak localization and electron-electron interaction. The low temperature zero field resistivity obeys a T 1/2 law, which is explained by electron-electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin-orbit interaction. The electron-phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interaction.

Original languageEnglish
Pages (from-to)380-386
Number of pages7
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume328
Issue number4-5
DOIs
StatePublished - 2 Aug 2004

Keywords

  • Vanadium alloy
  • Magneto-resistivity
  • Low Temperature
  • Electron-phonon scattering

Fingerprint Dive into the research topics of 'Weak localization and electron-electron interaction in disordered V<sub>80</sub>Al<sub>20-x</sub>Fe<sub>x</sub> alloys at low temperature'. Together they form a unique fingerprint.

Cite this