Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

Sheng Wen Wang, Kou Bin Hong, Yu Lin Tsai, Chu Hsiang Teng, An Jye Tzou, You Chen Chu, Po-Tsung Lee, Pei Cheng Ku, Chien-Chung Lin*, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated.

Original languageEnglish
Article number42962
JournalScientific reports
Volume7
DOIs
StatePublished - 3 Mar 2017

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