Wavelength-Tunable Erbium-doped fiber laser using silicon-oninsulator (SOI) based micro-ring with narrow laser linewidth

L. G. Yang, Chi-Wai Chow, C. H. Yeh, H. K. Tsang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We propose and demonstrate a wavelength-Tunable and narrow-linewidth erbium-doped fiber (EDF) laser using siliconon-insulator (SOI) based micro-ring. We discuss the wavelength selection and wavelength-Tunable operation of the proposed fiber laser. The SOI based micro-ring is fabricated on a SOI wafer with a 0.22 um thick top silicon layer and a 2 um thick burial oxide (BOX) layer. In order to enhance the coupling efficiency between the SOI based micro-ring and the EDF, a pair of uniform period grating couplers are used. In the experiment, the lasing wavelengths can be tuned in the wavelengths range from 1532 nm to 1567.2 nm with a tuning step of 2 nm. The wavelength range and the tuning step are determined by the EDFA gain-bandwidth and the FSR of the SOI based micro-ring respectively. The OSNR of each lasing wavelength is > 42 dB. By using a double-ring configuration, a narrow laser linewidth of 50 kHz can be achieved.

Original languageEnglish
Title of host publicationHigh-Power, High-Energy, and High-Intensity Laser Technology II
EditorsJoachim Hein
PublisherSPIE
ISBN (Electronic)9781628416343
DOIs
StatePublished - 1 Jan 2015
EventHigh-Power, High-Energy, and High-Intensity Laser Technology II - Prague, Czech Republic
Duration: 14 Apr 201515 Apr 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9513
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceHigh-Power, High-Energy, and High-Intensity Laser Technology II
CountryCzech Republic
CityPrague
Period14/04/1515/04/15

Keywords

  • Micro-ring
  • Optical communication
  • Silicon-on-insulator (SOI)

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