Wavelength switching transition in quantum dot lasers

Hsing Yeh Wang*, Hsu Chieh Cheng, Sheng-Di Lin, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing (∼1.3 μm), excited state lasing (∼1.2 μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.

Original languageEnglish
Article number081112
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
StatePublished - 1 Mar 2007

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