Wavelength switching transition in quantum dot lasers

Hsing Yeh Wang; Hsu Chieh Cheng; Sheng-Di Lin; Chien Ping Lee

doi:10.1063/1.2709987

Wavelength switching transition in quantum dot lasers

Hsing Yeh Wang^*, Hsu Chieh Cheng, Sheng-Di Lin, Chien Ping Lee

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing (∼1.3 μm), excited state lasing (∼1.2 μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.

Original language	English
Article number	081112
Journal	Applied Physics Letters
Volume	90
Issue number	8
DOIs	https://doi.org/10.1063/1.2709987
State	Published - 1 Mar 2007

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title = "Wavelength switching transition in quantum dot lasers",

abstract = "Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing (∼1.3 μm), excited state lasing (∼1.2 μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.",

author = "Wang, {Hsing Yeh} and Cheng, {Hsu Chieh} and Sheng-Di Lin and Lee, {Chien Ping}",

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N2 - Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing (∼1.3 μm), excited state lasing (∼1.2 μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.

AB - Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing (∼1.3 μm), excited state lasing (∼1.2 μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.

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