Wafer-to-wafer hybrid bonding technology for 3D IC

Cheng Ta Ko*, Zhi Cheng Hsiao, Huan Chun Fu, Kuan-Neng Chen, Wei Chung Lo, Yu Hua Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

In this research, the wafer-level metal/adhesive hybrid bonding technology was developed to perform the 3D integration platform. Four kinds of polymer materials, BCB, SU-8, AL-Polymer, and PI, were evaluated as the bonding adhesive for hybrid collocation with metal. After realizing the bonding properties, the qualified ones were patterned on wafers, and sequentially bonded by metal bonding conditions. Two kinds of conditions were simulated, one is Cu-Sn eutectic bonding, and the other is Cu-Cu thermo-compression bonding. The compatibility between each polymer and metal was evaluated, and the application range of each material was established thereof. Furthermore, samples with hybrid scheme were fabricated to perform hybrid bonding and realize the compatibility in whole process. The micro-bump/Cu-pad size less than 20μm and thickness less than 5μm were designed for interconnection. The bonding quality and interface investigation on metal/adhesive were analyzed to make sure the interconnection and micro-gap filling between stacked wafers. The evaluation results of wafer-level hybrid bonding and material candidates will be disclosed in the paper.

Original languageEnglish
Title of host publicationElectronics System Integration Technology Conference, ESTC 2010 - Proceedings
DOIs
StatePublished - 1 Dec 2010
Event3rd Electronics System Integration Technology Conference, ESTC 2010 - Berlin, Germany
Duration: 13 Sep 201016 Sep 2010

Publication series

NameElectronics System Integration Technology Conference, ESTC 2010 - Proceedings

Conference

Conference3rd Electronics System Integration Technology Conference, ESTC 2010
CountryGermany
CityBerlin
Period13/09/1016/09/10

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