Wafer-level MOSFET with submicron photolysis polymer temporary bonding technology using ultra-fast laser ablation for 3DIC application

Chuan An Cheng, Yu Hsiang Huang, Chien Hung Lin, Chia Lin Lee, Shan Chun Yang, Kuan-Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.

Original languageEnglish
Title of host publication2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467394789
DOIs
StatePublished - 27 May 2016
EventInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan
Duration: 25 Apr 201627 Apr 2016

Publication series

Name2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

ConferenceInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
CountryTaiwan
CityHsinchu
Period25/04/1627/04/16

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