Wafer bonding using indium tin oxide intermediate layer for high brightness leds

Po Chun Liu; Chih Yuan Hou; Yew-Chuhg Wu

Wafer bonding using indium tin oxide intermediate layer for high brightness leds

Po Chun Liu, Chih Yuan Hou, Yew-Chuhg Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Direct-wafer-bonding technique has been used to fabricate high brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, which may degrade the quality of the LED structure. In addition to this, the misorientation between two bonded wafers may cause defects between the wafers. In this study, these two problems were solved by bonding the wafers with an indium tin oxide (ITO) polycrystalline film at temperature below 650°C. It was found that the electrical resistance and optical loss decreased with the bonding temperature.

Original language	English
Pages	175-183
Number of pages	9
State	Published - 1 Dec 2003

Keywords

AlGaInP LEDs
Indium Tin Oxide
Wafer bonding

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title = "Wafer bonding using indium tin oxide intermediate layer for high brightness leds",

abstract = "Direct-wafer-bonding technique has been used to fabricate high brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, which may degrade the quality of the LED structure. In addition to this, the misorientation between two bonded wafers may cause defects between the wafers. In this study, these two problems were solved by bonding the wafers with an indium tin oxide (ITO) polycrystalline film at temperature below 650°C. It was found that the electrical resistance and optical loss decreased with the bonding temperature.",

keywords = "AlGaInP LEDs, Indium Tin Oxide, Wafer bonding",

author = "Liu, {Po Chun} and Hou, {Chih Yuan} and Yew-Chuhg Wu",

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AU - Hou, Chih Yuan

AU - Wu, Yew-Chuhg

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Y1 - 2003/12/1

N2 - Direct-wafer-bonding technique has been used to fabricate high brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, which may degrade the quality of the LED structure. In addition to this, the misorientation between two bonded wafers may cause defects between the wafers. In this study, these two problems were solved by bonding the wafers with an indium tin oxide (ITO) polycrystalline film at temperature below 650°C. It was found that the electrical resistance and optical loss decreased with the bonding temperature.

AB - Direct-wafer-bonding technique has been used to fabricate high brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, which may degrade the quality of the LED structure. In addition to this, the misorientation between two bonded wafers may cause defects between the wafers. In this study, these two problems were solved by bonding the wafers with an indium tin oxide (ITO) polycrystalline film at temperature below 650°C. It was found that the electrical resistance and optical loss decreased with the bonding temperature.

KW - AlGaInP LEDs

KW - Indium Tin Oxide

KW - Wafer bonding

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