Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

C. H. Seieh, Ray-Hua Horng, M. F. Huang, D. S. Wuu, W. C. Peng, S. J. Tsai, J. S. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

Original languageEnglish
Pages (from-to)854-855
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
DOIs
StatePublished - 2000

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