Wafer bonding by Ni-induced crystallization of amorphous silicon

Chun Ping Chao, Yew-Chuhg Wu*, Tzu Ling Lee, Yuh Huah Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.

Original languageEnglish
Pages (from-to)5527-5530
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
DOIs
StatePublished - 1 Sep 2003

Keywords

  • Amorphous silicon
  • Metal-induced crystallization of amorphous silicon
  • Nickel and electric field
  • Wafer bonding

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