Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes

Ray-Hua Horng*, Dong Sing Wuu, Sun Chin Wei, Chung Yang Tseng, Man Fang Huang, Kuo Hsiung Chang, Pin Hui Liu, Kun Chuan Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.

Original languageEnglish
Pages (from-to)2357-2359
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
StatePublished - 1 Dec 2000


  • Absorbed-substrate
  • AlGalnP
  • Joule heatin
  • LED
  • Mirror substrate
  • Wafer bonding

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