W-band 90nm CMOS LNA design

Chien Hsiung Liao*, Cheng Huang Hsieh, Shu-I Hu, Dow Chih Niu, Yu Shao Shiao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

This manuscript describes our W-band LNA design using commercial 90nm CMOS process. For effectively extending the amplifier's bandwidth without compromising its wideband matching or noise figure, a combination of common-source and cascode gain stages are employed for the five-stage circuit design. This 1200×900μm 2 low-noise amplifier has more than 10dB gain and around 12dB noise figure, with 41mW power consumption. Though primarily developed for our receiver array, this W-band LNA does find applications in areas such as image sensing, surveillance, radar, and millimeter-wave instrumentations. With consistent simulated and measured results, this circuit can be modified for covering even wider bandwidth whenever needed.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages430-432
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
CountryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • LNA
  • low noise amplifier
  • millimeter-wave
  • W-band

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