Drain leakage current degradation at zero Vgs in a hot carrier stressed n-MOSFET is measured and modeled. The dependences of drain leakage current on supply voltage and temperature are characterized. In modeling, various drain leakage current mechanisms including drain-to-source subthreshold leakage current, band-to-band tunneling current and interface trap assisted leakage current are taken into account. Our result shows that interface trap induced leakage current appears to be a dominant drain leakage mechanism as the supply voltage is scaled below 3.0 V. Drain leakage current degradation by orders of magnitude has been observed due to hot carrier stress.
|Number of pages||5|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 1998|
|Event||Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA|
Duration: 31 Mar 1998 → 2 Apr 1998