Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET

Ta-Hui Wang*, C. F. Hsu, L. P. Chiang, N. K. Zous, Tien-Sheng Chao, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

Drain leakage current degradation at zero Vgs in a hot carrier stressed n-MOSFET is measured and modeled. The dependences of drain leakage current on supply voltage and temperature are characterized. In modeling, various drain leakage current mechanisms including drain-to-source subthreshold leakage current, band-to-band tunneling current and interface trap assisted leakage current are taken into account. Our result shows that interface trap induced leakage current appears to be a dominant drain leakage mechanism as the supply voltage is scaled below 3.0 V. Drain leakage current degradation by orders of magnitude has been observed due to hot carrier stress.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1998
EventProceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA
Duration: 31 Mar 19982 Apr 1998

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