Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO 3 thin films

Chun Chieh Lin*, Chih Yang Lin, Meng Han Lin, Chen Hsi Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The Al/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the Al/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The Al/V:SZO-LNO/Pt device with lower resistive switching voltages (±7 V turn on and ±2 V turn off) and higher resistance ratio (10 7 is more suitable for practical applications compared to the Al/V:SZO/LNO device. The switching speed of the Al/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.

Original languageAmerican English
Pages (from-to)3146-3151
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume54
Issue number12
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Conduction mechanism
  • Nonvolatile memory (NVM)
  • Random access memory
  • Resistive random access memory (RRAM)
  • Resistive switching
  • SrZrO
  • Switching polarity

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