High-K MIM capacitors like HfO 2 are of great interests for Si analog and RF applications recently. This work is intended to explain dependences of VCC on dielectric thickness and frequency as well as temperature dependence of capacitance of HfO 2 MIM capacitors. Based on free carrier injection model, a unified understanding is achieved for the first time: (1) the thickness (t) dependence of VCC (a), which exhibits a relation α ∝ t -n, is an intrinsic property due to E-field polarization, (2) the frequency dependence of VCC, the stress induced VCC, and temperature dependences of capacitance are all due to change of relaxation time with different carrier mobility in insulator. This model is also applied to predict the VCC for future applications.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2003|
|Event||IEEE International Electron Devices Meeting - Washington, DC, United States|
Duration: 8 Dec 2003 → 10 Dec 2003