Voltage and Temperature Dependence of Capacitance of High-K HfO 2 MIM Capacitors: A Unified Understanding and Prediction

Chunxiang Zhu*, Hang Hu, Xiongfei Yu, S. J. Kim, Albert Chin, M. F. Li, Byung Jin Cho, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

44 Scopus citations


High-K MIM capacitors like HfO 2 are of great interests for Si analog and RF applications recently. This work is intended to explain dependences of VCC on dielectric thickness and frequency as well as temperature dependence of capacitance of HfO 2 MIM capacitors. Based on free carrier injection model, a unified understanding is achieved for the first time: (1) the thickness (t) dependence of VCC (a), which exhibits a relation α ∝ t -n, is an intrinsic property due to E-field polarization, (2) the frequency dependence of VCC, the stress induced VCC, and temperature dependences of capacitance are all due to change of relaxation time with different carrier mobility in insulator. This model is also applied to predict the VCC for future applications.

Original languageEnglish
Pages (from-to)879-882
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

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